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IGBT芯片
高压肖特基二极管1200V Silicon Carbide Schottky
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技术文章

Triggering in Quadrant I


Quadrant I operation occurs when the gate and A2/MT2 are positive with respect to A1/MT1. Figure 1

The precise mechanism is illustrated in Figure 3. The gate current makes an equivalent NPN transistor switch on, which in turn draws current from the base of an equivalent PNP transitor, turning it on also. Part of the gate current (dotted line) is lost through the ohmic path across the p-silicon, flowing directly into MT1 without passing through the NPN transistor base. In this case, the injection of holes in the p-silicon makes the stacked n, p and n layers beneath MT1 behave like a NPN transistor, which turns on due to the presence of a current in its base. This, in turn, causes the p, n and p layers over MT2 to behave like a PNP transistor, which turns on because its n-type base becomes forward-biased with the emitter (MT2). Thus, the triggering scheme is the same as an SCR and the equivalent circuit is outlined in Figure 4.

However, the structure is different from SCRs. In particular, in TRIACs there is always a small current flowing directly from the gate to MT1 through the p-silicon without passing through the p-n junction between the base and the emitter of the equivalent NPN transistor. This current is indicated in Figure 3 by a dotted red line and it is the reason why a TRIAC needs more gate current to turn on than a comparably rated SCR.[2]

Generally, this quadrant is the most sensitive one of the four.[clarification needed]

Triggering in Quadrant I
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