MABT01 MABT01

产品价格: < 面议
产品型号:MABT01
 牌:民瑞科技
公司名称:​深圳市英诺半导体有限公司​
  地:广东深圳
发布时间:2012-09-11
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产品简介

The MABT01 contains a power amplifier (PA), a low noise amplifier (LNA), and a SPDT switch.

产品详细信息

MABT01
2.4 to 2.5 GHz RF Front End IC
Description
The MABT01 contains a power amplifier (PA), a low noise amplifier (LNA), and a SPDT switch. It is a 16-pins IC by 3×3mm2-QFN package. RF input and output impedance of MABT01 are 50Ω matched. Therefore, precious real estate of circuit board is saved when MABT01 is used. Besides, there is one more precious advantage of MABT01. MABT01 and MCP01 are pin-to-pin compatible. Compared with MABT01, MCP01’s maximum output power is 5dB higher but consumes around 50mA more of current. When longer communication range is critical in a different wireless communication market, the MABT01 in the original circuit board could be replaced by MCP01 directly without modification of the original PCB. However, if this feature is desired, please layout the PCB based on MCP01’s data sheet (especially the land pattern). With the use of MABT01, it will offer convenience, flexibility and cost saving.
Features
• 12.8dBm P1dB and 16dB gain for transmitting RF signal
• 2.2dB NF and 12dB gain for receiving RF signal
• All PA, LNA and SPDT switch contained in a 16 pins 3×3mm2-QFN package
• Adjustable turn-on voltage levels
Applications
• Bluetooth
• 2.4 GHz ISM band application.
• Wireless phone
Absolute Maximum Ratings
DC Supply Voltage.............................................................................................................................6V
DC Supply Current......................................................................................................................40 mA
RF Input Power.............................................................................................................................5 dBm
VSWR of Output Load....................................................................................................................10:1
Operating Ambient Temperature.....................................................................................-40 oC to 85 oC
Storage Temperature.....................................................................................................-60 oC to 150 oC
Maximum Junction Temperature (Tj max) oC.............................................................................150 oC

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