功率MOSFET XP151A13A0MR-G

The XP151A13A0MR-G is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics.
  Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
  In order to counter static, a gate protect diode is built-in.
  The small SOT-23 package makes high density mounting possible.
Low On-State Resistance : Rds(on) = 0.1Ω@ Vgs = 4.5V
 : Rds(on) = 0.14Ω@ Vgs = 2.5V
 : Rds(on) = 0.25Ω@ Vgs = 1.5V
Ultra High-Speed Switching
Gate Protect Diode Built-in
Driving Voltage : 1.5V
N-Channel Power MOSFET
DMOS Structure
Small Package : SOT-23

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